NTE594 Silicon Diode, Bandswitch
Description: The NTE594 is a silicon band switching diode in an SOT-23 type surface mount package intended for thick and thin-film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Forward Voltage Reverse Current Series Resistance Diode Capacitance Symbol VF IR rD Cd Test Conditions IF = 100mA VR = 20V VR = 20V, TJ = 60C IF = 5mA VR = 20V, f = 1MHz Min - - - - - Typ - - - 0.5 0.8 Max 1.2 100 1 0.7 1.0 Unit V nA A pF
.016 (0.48)
K A N.C.
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1)
.007 (0.2)
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